4. Consider an n-channel MOS process with the following parameters: substrate doping density Na=1016 cm3, polysilicon gate doping density No (gate) = 2×1020 cm, gate oxide thickness tox= 50nm, and source and drain diffusion doping density No= 101 cm. In addition, we assume the junction depth of the source and drain diffusion regions is r=1.0 um. Plot the variation of the threshold voltage Vas a function of the channel length (L varies from 0.5 to 6pm). Note: use the first order AV: equation we derived in class.
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